Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3
AS Goossens, A Das, T Banerjee - Journal of Applied Physics, 2018 - pubs.aip.org
Computing inspired by the human brain requires a massive parallel architecture of low-
power consuming elements of which the internal state can be changed. SrTiO 3 is a complex
oxide that offers rich electronic properties; here, Schottky contacts on Nb-doped SrTiO 3 are
demonstrated as memristive elements for neuromorphic computing. The electric field at the
Schottky interface alters the conductivity of these devices in an analog fashion, which is
important for mimicking synaptic plasticity. Promising power consumption and endurance …
power consuming elements of which the internal state can be changed. SrTiO 3 is a complex
oxide that offers rich electronic properties; here, Schottky contacts on Nb-doped SrTiO 3 are
demonstrated as memristive elements for neuromorphic computing. The electric field at the
Schottky interface alters the conductivity of these devices in an analog fashion, which is
important for mimicking synaptic plasticity. Promising power consumption and endurance …
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