Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy
JW Huang, TF Kuech, H Lu, I Bhat - Applied physics letters, 1996 - pubs.aip.org
We have applied frequency-dependent capacitance measurements and admittance
spectroscopy on GaN: Mg to study the electronic states associated with Mg doping.
Metalorganic vapor phase epitaxy GaN: Mg samples with two different Mg doping levels
were grown and thermally annealed in nitrogen. Lateral dot-and-ring Schottky diodes using
Au/Ti were fabricated. Frequency-dependent measurements on these diodes show that the
capacitance is reduced at a higher frequency, most likely due to the inability of a deep center …
spectroscopy on GaN: Mg to study the electronic states associated with Mg doping.
Metalorganic vapor phase epitaxy GaN: Mg samples with two different Mg doping levels
were grown and thermally annealed in nitrogen. Lateral dot-and-ring Schottky diodes using
Au/Ti were fabricated. Frequency-dependent measurements on these diodes show that the
capacitance is reduced at a higher frequency, most likely due to the inability of a deep center …
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