Electrical conductivity of undoped and rare-earth-doped high-resistivity GaSe crystals
AS Abdinov, SA Allakhverdiev, RF Babaeva… - Inorganic Materials, 2009 - Springer
Inorganic Materials, 2009•Springer
The time-dependent conductivity of nominally undoped and rare-earth-doped (NR≃ 10− 5 to
10− 1 at% Gd, Dy, or Ho) high-resistivity gallium selenide crystals has been measured under
various conditions. At a relatively low applied voltage and T≤ 150 K, the conductivity of the
crystals reaches a steady-state value rather slowly. When a voltage above a certain
threshold is applied for a long time at T≤ 300 K, the material exhibits electric fatigue. An
energy-band model is proposed which provides qualitative explanation of the results.
10− 1 at% Gd, Dy, or Ho) high-resistivity gallium selenide crystals has been measured under
various conditions. At a relatively low applied voltage and T≤ 150 K, the conductivity of the
crystals reaches a steady-state value rather slowly. When a voltage above a certain
threshold is applied for a long time at T≤ 300 K, the material exhibits electric fatigue. An
energy-band model is proposed which provides qualitative explanation of the results.
Abstract
The time-dependent conductivity of nominally undoped and rare-earth-doped (N R≃10−5 to 10−1 at % Gd, Dy, or Ho) high-resistivity gallium selenide crystals has been measured under various conditions. At a relatively low applied voltage and T ≤ 150 K, the conductivity of the crystals reaches a steady-state value rather slowly. When a voltage above a certain threshold is applied for a long time at T ≤ 300 K, the material exhibits electric fatigue. An energy-band model is proposed which provides qualitative explanation of the results.
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