Electrical transport of Bi–ZnO nanowires shows n-type semiconducting behavior with a
carrier concentration of∼ 3.5× 10 8 cm− 1 (2.7× 10 19 cm− 3) and an electron mobility of 1.5
cm 2∕ V s⁠. The carrier concentration is one order of magnitude larger than that of
undoped ZnO nanowires, indicating that Bi acts as donor rather than the usual acceptor in
ZnO films. The low mobility may be in association with electron scatterings at the boundaries
from small size effect of nanowires. Near band edge emission in photoluminescence …