Electrical response of CdS thin film and CdS/Si heterojunction to gamma radiation
MR Balboul, A Abdel-Galil, IS Yahia… - Advances in Materials …, 2016 - Wiley Online Library
Advances in Materials Science and Engineering, 2016•Wiley Online Library
Gamma irradiation method has been used to change the electrical properties of CdS thin
film. A specific dose of γ‐irradiation increases the activation energy of CdS thin film. In
addition, γ‐irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film
from negative to positive irrespective of temperature. The Hall mobility mechanism shows
noticeable change after γ‐irradiation from decreasing to increasing with raising the
temperature. In depth, analysis was done using capacitance‐voltage measurement in order …
film. A specific dose of γ‐irradiation increases the activation energy of CdS thin film. In
addition, γ‐irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film
from negative to positive irrespective of temperature. The Hall mobility mechanism shows
noticeable change after γ‐irradiation from decreasing to increasing with raising the
temperature. In depth, analysis was done using capacitance‐voltage measurement in order …
Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose of γ‐irradiation increases the activation energy of CdS thin film. In addition, γ‐irradiation was used to change the sign of Hall coefficient, RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change after γ‐irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance‐voltage measurement in order to realize the modification in the CdS/Si junction band gap after γ‐irradiation. Several parameters were also studied such as charge carrier concentration, ND, and flat band potential, Vfb. The γ‐irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.
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