Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17±0.01 eV. The hole mobility is 10 cm 2/V· s and is almost temperature independent from 160 to 300 K. The detailed analysis employing Fermi-Dirac statistics was then extended to determine the temperature dependence of the Fermi level.