Electron spin injection into GaAs from ferromagnetic contacts in remanence
NC Gerhardt, S Hövel, C Brenner, MR Hofmann… - Applied Physics …, 2005 - pubs.aip.org
We demonstrate electrical spin injection into a (Ga In) As∕ Ga As light-emitting diode from
the remanent state of ferromagnetic contacts in perpendicular geometry. Using a Fe∕ Tb
multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky
contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90
K.Controlled electrical spin injection into semiconductors 1 is the basic requirement for
possible future spintronic devices. Remarkable progress has been achieved using the …
the remanent state of ferromagnetic contacts in perpendicular geometry. Using a Fe∕ Tb
multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky
contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90
K.Controlled electrical spin injection into semiconductors 1 is the basic requirement for
possible future spintronic devices. Remarkable progress has been achieved using the …
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