We have investigated the electronic structure of the p-type diluted magnetic semiconductor In 1− x Mn x As by photoemission spectroscopy. The Mn 3 d partial density of states is found to be basically similar to that of Ga 1− x Mn x As. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga 1− x Mn x As. This difference would explain the difference in transport, magnetic and optical properties of In 1− x Mn x As and Ga 1− x Mn x As. The different electronic structures are attributed to the weaker Mn 3 d− As 4 p hybridization in In 1− x Mn x As than in Ga 1− x Mn x As.