Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors
Using integrated interdigital transducers (IDTs), we demonstrate the emission of surface
acoustic waves (SAWs) by AlGaN/GaN high electron mobility transistors (HEMTs) under
certain bias conditions through dynamic screening of the HEMTs vertical field by modulation
of its two-dimensional electron gas. We show that a strong SAW signal can be detected if the
IDT geometry replicates the HEMT electrode geometry at which RF bias is applied. In
addition to characterizing SAW emission during both gate-source and drain-source …
acoustic waves (SAWs) by AlGaN/GaN high electron mobility transistors (HEMTs) under
certain bias conditions through dynamic screening of the HEMTs vertical field by modulation
of its two-dimensional electron gas. We show that a strong SAW signal can be detected if the
IDT geometry replicates the HEMT electrode geometry at which RF bias is applied. In
addition to characterizing SAW emission during both gate-source and drain-source …
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