Enhanced charge separation through modulation of defect-state in wide band-gap semiconductor for potential photocatalysis application: Ultrafast spectroscopy and …
Structural defects of wide band gap semiconductors play important role in their functionality.
Defect mediated recombination of photoinduced electron-hole pair in the semiconductors for
their photocatalytic activities, is detrimental. In the case of ZnO nanostructures, radiative
recombination upon band-gap photo-excitation (3.37 eV) originated from different surface
defects (mainly Oxygen vacancies at 2.50 eV (V+) and 2.25 eV (V++) with respect to valance
and conduction bands respectively) of crystal lattice, acquires immense interest for both …
Defect mediated recombination of photoinduced electron-hole pair in the semiconductors for
their photocatalytic activities, is detrimental. In the case of ZnO nanostructures, radiative
recombination upon band-gap photo-excitation (3.37 eV) originated from different surface
defects (mainly Oxygen vacancies at 2.50 eV (V+) and 2.25 eV (V++) with respect to valance
and conduction bands respectively) of crystal lattice, acquires immense interest for both …
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