In this study, the effects of strain on the 19nm n-channel MOSFET device performance have been investigated. The comparison of performances between unstrained and strained 19nm n-channel MOSFET device was also explored. The virtual fabrication of the device was performed using ANTHENA module while the device’s electrical characteristics were simulated using ATLAS module. In this work, higher electron mobility or drive current (ION) for a device has been achieved by using a high-k material for the gate spacer with Strain Si/SiGe. The result shows that the value of ION (600 μA/μm) meet the ITRS 2013 prediction for low power performance technology.