Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers
CC Yang, JK Sheu, XW Liang, MS Huang… - Applied Physics …, 2010 - pubs.aip.org
InGaN/sapphire-based pin type photovoltaic (PV) devices were shown to have Al 0.14 Ga
0.86 N/In 0.21 Ga 0.79 N heterostructures that enhance the extraction of photogenerated
carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN
absorption layers, PV devices exhibit lower RS despite the increase in conduction-band
discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement
can be attributed to polarization-induced electric fields enhanced by the incorporated …
0.86 N/In 0.21 Ga 0.79 N heterostructures that enhance the extraction of photogenerated
carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN
absorption layers, PV devices exhibit lower RS despite the increase in conduction-band
discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement
can be attributed to polarization-induced electric fields enhanced by the incorporated …
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