Epitaxial growth of cobalt films on Cu (100): a crystallographic LEED determination
JR Cerda, PL De Andres, A Cebollada… - Journal of Physics …, 1993 - iopscience.iop.org
Journal of Physics: Condensed Matter, 1993•iopscience.iop.org
Epitaxial thin films of cobalt ranging from 1 ML up to 10 ML have been grown on a Cu (100)
substrate and characterized by LEED. The cobalt is found to grow, adopting a slight
tetragonal distortion of its high-temperature FCC phase. Further growth of 5 ML Cu on top of
a 5 ML Co film results in an almost perfect Cu (100) surface.
substrate and characterized by LEED. The cobalt is found to grow, adopting a slight
tetragonal distortion of its high-temperature FCC phase. Further growth of 5 ML Cu on top of
a 5 ML Co film results in an almost perfect Cu (100) surface.
Abstract
Epitaxial thin films of cobalt ranging from 1 ML up to 10 ML have been grown on a Cu (100) substrate and characterized by LEED. The cobalt is found to grow, adopting a slight tetragonal distortion of its high-temperature FCC phase. Further growth of 5 ML Cu on top of a 5 ML Co film results in an almost perfect Cu (100) surface.
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