Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
A method for depositing epitaxial films of silicon carbon (Si: C). In one embodiment, the
method includes depositing an n-type doped silicon carbon (Si: C) semiconductor material
on a semiconductor deposition surface using a deposition gas precursor composed of a
silane containing gas precursor, a carbon containing gas precursor, and an n-type gas
dopant source. The deposition gas precursor is introduced to the semiconductor deposition
surface with a hydrogen (H 2) carrier gas. The method for depositing epitaxial films may …
method includes depositing an n-type doped silicon carbon (Si: C) semiconductor material
on a semiconductor deposition surface using a deposition gas precursor composed of a
silane containing gas precursor, a carbon containing gas precursor, and an n-type gas
dopant source. The deposition gas precursor is introduced to the semiconductor deposition
surface with a hydrogen (H 2) carrier gas. The method for depositing epitaxial films may …
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