Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers
VS Kharlamov, BJ Ber, YV Trushin… - … in Science and …, 2001 - spiedigitallibrary.org
VS Kharlamov, BJ Ber, YV Trushin, EE Zhurkin, AP Kovarski, AA Schmidt
Fourth International Workshop on Nondestructive Testing and …, 2001•spiedigitallibrary.orgThe combined experimental and computer simulation technique for the estimation of the
displacement threshold energies of impurity atoms in materials has been developed. The
technique is based on SIMS sputtering profiling of structures with thin impurity marker layers
and computer simulation of this process. Using this technique the displacement threshold
energies of Al atoms in GaAs matrix and Sb atoms in Si matrix have been estimated.
displacement threshold energies of impurity atoms in materials has been developed. The
technique is based on SIMS sputtering profiling of structures with thin impurity marker layers
and computer simulation of this process. Using this technique the displacement threshold
energies of Al atoms in GaAs matrix and Sb atoms in Si matrix have been estimated.
The combined experimental and computer simulation technique for the estimation of the displacement threshold energies of impurity atoms in materials has been developed. The technique is based on SIMS sputtering profiling of structures with thin impurity marker layers and computer simulation of this process. Using this technique the displacement threshold energies of Al atoms in GaAs matrix and Sb atoms in Si matrix have been estimated.
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