promising electronic and optoelectronic properties. Here, we focused on recently prepared
Hf-based MXenes, namely, Hf 3 C 2 O 2 and Hf 2 CO 2. Using the first-principles calculation
and excited state corrections, we proved their dynamical stability, reconciled their
semiconducting behavior, and obtained fundamental gaps by using the many-body GW
method (indirect 1.1 and 2.2 eV; direct 1.4 and 3.5 eV). Using the Bethe–Salpeter equation …