This study presents the synthesis of zinc telluride (ZnTe) nanoflakes and their composite with reduced graphene oxide (RGO-ZnTe) through a simple hydrothermal reaction. The crystal structure of the synthesized materials was characterized using X-ray Diffraction techniques. Subsequently, the Metal-Semiconductor (MS) based Schottky devices were fabricated by depositing the ZnTe and RGO-ZnTe thin films and Aluminium electrodes via vacuum coating methods. The surface morphology and topography of the deposited films were investigated using field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) techniques, respectively, to study the formation of MS junctions. The interfacial properties of the MS junctions in the Al/ZnTe/ITO and Al/RGO-ZnTe/ITO configurations were analyzed using ac impedance spectroscopy over a frequency range of 50 Hz–10 MHz. Thereafter, the bias-dependent impedance spectrometry was also conducted within a voltage range of ± 0.6 V to establish the equivalent circuits for the fabricated MS junction Schottky diodes (SDs). The diode parameters, including on/off ratio, ideality factor, barrier height and series resistance were determined by measuring the current–voltage (I–V) characteristics of the fabricated SDs. Further, the charge transport parameters, such as dc conductivity and photosensitivity, were also estimated. The findings indicate that the Schottky devices based on the RGO-ZnTe composites exhibit enhanced device performance compared to those based on pristine ZnTe, attributed to the synergistic effects between the RGO sheets and ZnTe nanoflakes.