Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy
We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and
AlN layers and c-oriented wurtzite GaN, AlN, and Al x Ga 1− x N (x< 0.3) layers were grown
by molecular beam epitaxy on GaAs and Si (111) substrates, respectively. The Berreman
effect allows us to observe simultaneously the transverse optic and the longitudinal optic
phonons of both the cubic and the hexagonal films as transmission minima in the infrared
spectra acquired with obliquely incident radiation. We discuss our results in terms of the …
AlN layers and c-oriented wurtzite GaN, AlN, and Al x Ga 1− x N (x< 0.3) layers were grown
by molecular beam epitaxy on GaAs and Si (111) substrates, respectively. The Berreman
effect allows us to observe simultaneously the transverse optic and the longitudinal optic
phonons of both the cubic and the hexagonal films as transmission minima in the infrared
spectra acquired with obliquely incident radiation. We discuss our results in terms of the …
[引用][C] Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy
J Ibáez, S Hernández, E Alarcón-Lladó… - Journal of Applied …, 2008 - elibrary.ru
Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam
epitaxy … FAR-INFRARED TRANSMISSION IN GAN, ALN, AND ALGAN THIN FILMS
GROWN BY MOLECULAR BEAM EPITAXY …
epitaxy … FAR-INFRARED TRANSMISSION IN GAN, ALN, AND ALGAN THIN FILMS
GROWN BY MOLECULAR BEAM EPITAXY …
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