Ferroelectric c-axis textured aluminum scandium nitride thin films of 100 nm thickness
2020 Joint Conference of the IEEE International Frequency Control …, 2020•ieeexplore.ieee.org
We report on the properties of Aluminum Scandium Nitride (AlScN) thin films deposited by
pulsed-DC co-sputtering. We present the impact of the nitrogen-to-argon gas ratio on the
crystal growth orientation, film stress, surface roughness, scandium concentration, and
deposition rate of 760-860 nm thick AlScN thin films on Ti/Pt (111). We utilize the optimized
process conditions from this study to deposit thin layers of AlScN and to explore the
nucleation and orientation of thin AlScN layers on Ti/Pt (111). We report on the ferroelectric …
pulsed-DC co-sputtering. We present the impact of the nitrogen-to-argon gas ratio on the
crystal growth orientation, film stress, surface roughness, scandium concentration, and
deposition rate of 760-860 nm thick AlScN thin films on Ti/Pt (111). We utilize the optimized
process conditions from this study to deposit thin layers of AlScN and to explore the
nucleation and orientation of thin AlScN layers on Ti/Pt (111). We report on the ferroelectric …
We report on the properties of Aluminum Scandium Nitride (AlScN) thin films deposited by pulsed-DC co-sputtering. We present the impact of the nitrogen-to-argon gas ratio on the crystal growth orientation, film stress, surface roughness, scandium concentration, and deposition rate of 760-860 nm thick AlScN thin films on Ti/Pt (111). We utilize the optimized process conditions from this study to deposit thin layers of AlScN and to explore the nucleation and orientation of thin AlScN layers on Ti/Pt (111). We report on the ferroelectric properties of 100 nm thick AlScN materials.
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