Aluminium to Aluminium (Al-Al) direct bonding is CMOS line compatible and is comparable to gold (Au) and copper (Cu) due to metal cross-contamination in a process line. The Au-Au and Cu-Cu direct bonding are widely used and oxides of these metals are either negligible or can be controlled. Aluminium low temperature direct bonding would enable integrations of various types of sensors onto a CMOS wafer. On the contrary, Al tends to form an oxide layer as soon as it comes in contact to ambient atmosphere, which is difficult to remove and passivate thus requiring higher bonding temperature and bonding forces. In this paper, we would like to present the technology enabler processes that could lead to successful aluminium hybrid bonding: aluminum electro-plating for via filling, aluminum oxide removal and surface passivation and aluminium direct bonding at low temperatures. Low-temperature bonding is demonstrated using, in-situ surface treatment leading to metallic bonds at a temperature < 300 °C in ambient conditions.