integration with electronics through standard silicon processing technology. We present an
approach to producing single crystal membranes of germanium with in-built tensile strain,
which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick,
free-standing 1 mm 2 Ge membrane. We convert the fabrication technique into an integrated-
circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of …