Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
Y Turkulets, I Shalish - Journal of Applied Physics, 2018 - pubs.aip.org
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors
under high electric fields. While Franz [Z. Naturforsch. A 13, 484 (1958)] and Keldysh [Sov.
Phys. JETP 7, 788 (1958)] considered a limited case of externally applied uniform electric
field, the same effect may also be caused by built-in electric fields at semiconductor surfaces
and interfaces. While in the first case, the bands are bent linearly, in the latter case, they are
bent parabolically. This non-linear band bending poses an additional complexity that has …
under high electric fields. While Franz [Z. Naturforsch. A 13, 484 (1958)] and Keldysh [Sov.
Phys. JETP 7, 788 (1958)] considered a limited case of externally applied uniform electric
field, the same effect may also be caused by built-in electric fields at semiconductor surfaces
and interfaces. While in the first case, the bands are bent linearly, in the latter case, they are
bent parabolically. This non-linear band bending poses an additional complexity that has …
以上显示的是最相近的搜索结果。 查看全部搜索结果