μm-deep channels. Wafers were bonded anodically using an intermediate amorphous
silicon film. Electric fields as high as 283 V/cm were applied across the separation channel
to obtain baseline resolution of fluorescent standards in 4.8 s. The effect of electric fields
ranging from 0 to 283 V/cm on the separations and resulting resolutions were examined.
Resolution was shown to increase linearly with the applied electric field. Joule heating was …