technology (AMS 0.35 µm) is presented. The MEMS structure is basically a clamped-
clamped beam resonator implemented with the polysilicon capacitance module of the
selected technology, showing a fundamental lateral resonance frequency of 22.5 MHz. Two
different approaches based, respectively, on the nonlinearity of the voltage against the
excitation force and on the amplitude modulation of the excitation signal, have been …