The photoluminescence spectra of GaAs/GaAlAs multiple quantum wells on GaAs buffer
show a band related to confined quantum‐well states as well as the emission from electron‐…

Metalorganic chemical vapour deposition growth of GaSb self-assembled quantum dots (QDs)
on GaAs substrates was optimized with respect to their geometry. The results show that …

We report on optical and electrical characterisation of InN thin films prepared by RF reactive
sputtering of In target with pure nitrogen gas. The resistivity of the films is in the range of 10 −…

A general framework for the operation of a large class of quantum confined light modulators
is offered, supported by a discussion of the theoretical background. The design of a quantum …

The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is
shown to be correlated to the oxygen content of the films. Films with lower oxygen content …

Remote plasma enhanced-laser-induced chemical vapor deposition was used to grow
gallium nitride films on zinc oxide buffer layers deposited by atomic layer epitaxy on soda lime …

An efficient combined numerical-analytical technique is developed for calculating states of
the continuum spectrum in systems with quantum wells (QWs) with an arbitrary potential …

We examine the morphology of ultrathin GaSb layers grown by atmospheric pressure
chemical vapour deposition on GaAs substrates. Atomic force microscopy is used as a primary …

Dot size and density are important factors that determine the physical properties of
semiconductor materials based on arrays of self-assembled dots (SADs). We report the effects of …

The" deep" yellow donor-acceptor pair (DAP) recombination is perhaps the most known but
less understood photoluminescence (PL) emission of GaN. The origin of the" yellow" DAP …