Growth of Ge-rich SixGe1− x single crystal with uniform composition (x= 0.02) on a compositionally graded crystal for use as GaAs solar cells
K Nakajima, S Kodama, S Miyashita, G Sazaki… - Journal of crystal …, 1999 - Elsevier
An improved growth technology was developed to grow Ge-rich SiGe crystals on Ge seeds
on the basis of the Multi-component zone melting method. The purpose of growing such a
crystal is the preparation of exactly lattice-matched GaAs/SiGe heterostructures for higher-
efficiency tandem cells than GaAs/Ge cells. In this method, Si solute elements are
continuously supplied from the Si source crystal, and the compositional profile in the SiGe
crystal is controlled by the pulling rate. We were successful in preparing a SixGe1− x single …
on the basis of the Multi-component zone melting method. The purpose of growing such a
crystal is the preparation of exactly lattice-matched GaAs/SiGe heterostructures for higher-
efficiency tandem cells than GaAs/Ge cells. In this method, Si solute elements are
continuously supplied from the Si source crystal, and the compositional profile in the SiGe
crystal is controlled by the pulling rate. We were successful in preparing a SixGe1− x single …
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