Growth of cubic (zinc blende) CdSe by molecular beam epitaxy
We report the growth of cubic (zinc hlende) CdSe epilayers on r 1001 GaAs substrates by
molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 A, and the
energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively. The past few years
have seen a growing interest in the molecular beam epitaxy (MBE) of lIN! compounds and
related alloys, especially because of potential applications in the visible and infrared.'So far,
studies have focused on ZnTe, ZnSe, ZnS, CdTe, and CdS, as well as on derivative alloys …
molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 A, and the
energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively. The past few years
have seen a growing interest in the molecular beam epitaxy (MBE) of lIN! compounds and
related alloys, especially because of potential applications in the visible and infrared.'So far,
studies have focused on ZnTe, ZnSe, ZnS, CdTe, and CdS, as well as on derivative alloys …
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