Growth of single-crystalline, atomically smooth MgO films on Ge (0 0 1) by molecular beam epitaxy
We investigate the growth of MgO thin films on Ge (001) via molecular beam epitaxy and find
that the growth temperature plays a key role in the quality of MgO thin films. Reflection high-
energy electron diffraction (RHEED) and atomic force microscopy show that the single-
crystal quality and atomically smooth morphology are optimized for a growth temperature of
250° C. RHEED and transmission electron microscopy indicate that the MgO is (001)
oriented and the MgO unit cell has a 45° in-plane rotation with respect to that of Ge …
that the growth temperature plays a key role in the quality of MgO thin films. Reflection high-
energy electron diffraction (RHEED) and atomic force microscopy show that the single-
crystal quality and atomically smooth morphology are optimized for a growth temperature of
250° C. RHEED and transmission electron microscopy indicate that the MgO is (001)
oriented and the MgO unit cell has a 45° in-plane rotation with respect to that of Ge …
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