The present invention provides a back-end-of-the-line (BEOL) interconnect structure of
either the dual or single damascene type in a low k dielectric (k of about 3.0 or less,
preferably less than about 2.8, and more preferably less than about 2.5) with improved
reliability. The inventive BEOL interconnect structures formed in the low k dielectric are very
stable and have reliable electrical characteristics, such as leakage, metal resistance and
capacitance, during field operation or reliability stress as compared with conventional