High carrier mobility in orientation-controlled large-grain (≥ 50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge
crystals on flexible-plastic directly formed by nucleation-controlled gold-induced-
crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-
crystallization (AIC). The Ge crystals show p-type conductions. Here, hole concentrations are
2.2× 10 17 and 5.8× 10 20 cm− 3 for GIC-Ge and AIC-Ge, respectively, which are explained …
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge
crystals on flexible-plastic directly formed by nucleation-controlled gold-induced-
crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-
crystallization (AIC). The Ge crystals show p-type conductions. Here, hole concentrations are
2.2× 10 17 and 5.8× 10 20 cm− 3 for GIC-Ge and AIC-Ge, respectively, which are explained …
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