Tailored doping of barrier layers enables balancing of the radiative recombination among
the multiple-quantum-Wells in III-Nitride light-emitting diodes. This tailored doping enables
more symmetric carrier transport and uniform carrier distribution which help to reduce
electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs.
Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market
penetration of Solid-state-light ing technologies in high-power lighting and illumination.