consisting of a solution-processed AlOX gate dielectric on a polyimide (PI) substrate. The ink-
jet printed thin-film transistors (TFTs) exhibited a field-effect mobility of 2.41 cm2 V− 1 s− 1
and a subthreshold swing of 65 mV dec− 1. We also demonstrated a flexible, low voltage-
driven inverter, exhibiting a gain of− 1.81 VV− 1 at a driving voltage of− 1.0 V.