High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
This investigation examines polycrystalline silicon thin-film transistors (TFTs) with multiple
nanowire channels and a lightly doped drain (LDD). A device with an LDD structure exhibits
low leakage current because the lateral electrical field is reduced in the drain offset region.
Additionally, multiple nanowire channels can generate fewer defects in the polysilicon grain
boundary and have more efficient NH 3 plasma passivation than single-channel TFTs,
further reducing leakage current. They exhibit superior electrical characteristics to those of …
nanowire channels and a lightly doped drain (LDD). A device with an LDD structure exhibits
low leakage current because the lateral electrical field is reduced in the drain offset region.
Additionally, multiple nanowire channels can generate fewer defects in the polysilicon grain
boundary and have more efficient NH 3 plasma passivation than single-channel TFTs,
further reducing leakage current. They exhibit superior electrical characteristics to those of …
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