High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
A Kakanakova-Georgieva, D Nilsson, E Janzén - Journal of crystal growth, 2012 - Elsevier
We report on a growth of AlN at reduced temperatures of 1100° C and 1200° C in a
horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for
operation at temperatures of up to 1500–1600° C and using a joint delivery of precursors.
We present a simple route—as viewed in the context of the elaborate multilayer growth
approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at
the reduced temperature of 1200° C. The established growth conditions in conjunction with …
horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for
operation at temperatures of up to 1500–1600° C and using a joint delivery of precursors.
We present a simple route—as viewed in the context of the elaborate multilayer growth
approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at
the reduced temperature of 1200° C. The established growth conditions in conjunction with …
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