High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs

S Huang, Q Jiang, K Wei, G Liu, J Zhang… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, C Zhao, H Liu, Z Jin…
2014 IEEE International Electron Devices Meeting, 2014•ieeexplore.ieee.org
A high-temperature (180° C) gate recess technique featuring low damage and in-situ self-
clean capability, in combination with O 3-assisted atomic-layer-deposition (ALD) of Al 2 O 3
gate dielectric, is developed for fabrication of high performance normally-off AlGaN/GaN
metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs), which exhibit
a threshold voltage of+ 1.6 V, a pulsed drive current of 1.1 A/mm, and low dynamic ON-
resistance under hard-switching operation. Chlorine-based dry-etching residues (eg AlCl 3 …
A high-temperature (180 °C) gate recess technique featuring low damage and in-situ self-clean capability, in combination with O 3 -assisted atomic-layer-deposition (ALD) of Al 2 O 3 gate dielectric, is developed for fabrication of high performance normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs), which exhibit a threshold voltage of +1.6 V, a pulsed drive current of 1.1 A/mm, and low dynamic ON-resistance under hard-switching operation. Chlorine-based dry-etching residues (e.g. AlCl 3 and GaCl 3 ) are significantly reduced by increasing the wafer temperature during the gate recess to their characteristic desorption temperature, while defective bonds like Al-O-H and positive fixed charges in ALD-Al 2 O 3 are significantly suppressed by substitution of H 2 O with O 3 precursor.
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