High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography …
Next generation electronic devices like single electron transistors (SETs) operating at room
temperature (RT) demand for high-resolution patterning techniques and simultaneously cost-
effective, high-throughput manufacturing. Thereby, field-emission scanning probe
lithography (FE-SPL) is a direct writing method providing high-resolution and high-quality
nanopatterns. SET devices prepared by FE-SPL and plasma etching at cryogenic substrate
temperature were shown to operate at RT [C. Lenk et al., Microelectron. Eng. 192, 77 (2018); …
temperature (RT) demand for high-resolution patterning techniques and simultaneously cost-
effective, high-throughput manufacturing. Thereby, field-emission scanning probe
lithography (FE-SPL) is a direct writing method providing high-resolution and high-quality
nanopatterns. SET devices prepared by FE-SPL and plasma etching at cryogenic substrate
temperature were shown to operate at RT [C. Lenk et al., Microelectron. Eng. 192, 77 (2018); …
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