We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over 2% on GaAs (311)B substrate for a polarization controlled vertical-cavity surface-emitting laser (VCSEL). By increasing the In composition in GaInAs, the optical anisotropy in photoluminescence (PL) intensity was increased. The anisotropy of 50% was obtained at 1.15 /spl mu/m emission wavelength. We have demonstrated edge-emitting lasers and VCSELs emitting at over 1.1 /spl mu/m on GaAs (311)B substrate for the first time. The 1.15-/spl mu/m edge-emitting laser showed a characteristic temperature of 210 K and the threshold current density of 410 A/cm/sup 2/. The threshold current and lasing wavelength of VCSELs are 0.9 mA and 1.12 /spl mu/m, respectively. The orthogonal polarization suppression ratio was 25 dB and CW operation up to 170/spl deg/C without a heat sink was achieved.