degradation in performance are demonstrated. The FETs are based on buckled thin films of
polyfluorene-wrapped semiconducting single-walled carbon nanotubes (CNTs) as the
channel, a flexible ion gel as the dielectric, and buckled metal films as electrodes. The
buckling of the CNT film enables the high degree of stretchability while the flexible nature of
the ion gel allows it to maintain a high quality interface with the CNTs during stretching. An …