Hot-carrier far infrared emission in silicon
LA Kosyachenko, MP Mazur - Semiconductors, 1999 - Springer
LA Kosyachenko, MP Mazur
Semiconductors, 1999•SpringerThis paper describes studies of hot electroluminescence from silicon transistor structures in
the photon energy range 0.25 to 0.8 eV. The transistor structures npn and pnp used to obtain
the emission spectra generated at accelerating voltages low enough that only one kind of
carrier was involved in the excitation. Participation of hot carriers both in direct intersubband
and indirect intraband radiative transitions is discussed.
the photon energy range 0.25 to 0.8 eV. The transistor structures npn and pnp used to obtain
the emission spectra generated at accelerating voltages low enough that only one kind of
carrier was involved in the excitation. Participation of hot carriers both in direct intersubband
and indirect intraband radiative transitions is discussed.
Abstract
This paper describes studies of hot electroluminescence from silicon transistor structures in the photon energy range 0.25 to 0.8 eV. The transistor structures n-p-n and p-n-p used to obtain the emission spectra generated at accelerating voltages low enough that only one kind of carrier was involved in the excitation. Participation of hot carriers both in direct intersubband and indirect intraband radiative transitions is discussed.
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