Hybrid indium phosphide-on-silicon nanolaser diode

G Crosnier, D Sanchez, S Bouchoule, P Monnier… - Nature …, 2017 - nature.com
G Crosnier, D Sanchez, S Bouchoule, P Monnier, G Beaudoin, I Sagnes, R Raj, F Raineri
Nature Photonics, 2017nature.com
The most-awaited convergence of microelectronics and photonics promises to bring about a
revolution for on-chip data communications and processing. Among all the optoelectronic
devices to be developed, power-efficient nanolaser diodes able to be integrated densely
with silicon photonics and electronics are essential to convert electrical data into the optical
domain. Here, we report a demonstration of ultracompact laser diodes based on one-
dimensional (1D) photonic crystal (PhC) nanocavities,, made in InP nanoribs …
Abstract
The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities,, made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.
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