Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM
SU Sharath, MJ Joseph, S Vogel, E Hildebrandt… - Applied Physics …, 2016 - pubs.aip.org
We have investigated the material and electrical properties of tantalum oxide thin films (TaO
x) with engineered oxygen contents grown by RF-plasma assisted molecular beam epitaxy.
The optical bandgap and the density of the TaO x films change consistently with oxygen
contents in the range of 3.63 to 4.66 eV and 12.4 to 9.0 g/cm 3, respectively. When exposed
to atmosphere, an oxidized Ta 2 O 5-y surface layer forms with a maximal thickness of 1.2
nm depending on the initial oxygen deficiency of the film. X-ray photoelectron spectroscopy …
x) with engineered oxygen contents grown by RF-plasma assisted molecular beam epitaxy.
The optical bandgap and the density of the TaO x films change consistently with oxygen
contents in the range of 3.63 to 4.66 eV and 12.4 to 9.0 g/cm 3, respectively. When exposed
to atmosphere, an oxidized Ta 2 O 5-y surface layer forms with a maximal thickness of 1.2
nm depending on the initial oxygen deficiency of the film. X-ray photoelectron spectroscopy …