Indium on Si(111): A Nearly Free Electron Metal in Two Dimensions
Physical review letters, 2003•APS
We present measurements of the Fermi surface and underlying band structure of a single
layer of indium on Si (111) with 7× 3 periodicity. Electrons from both indium valence
electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a
pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the
underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long,
suggesting the system might be a suitable model for studying the ground state of two …
layer of indium on Si (111) with 7× 3 periodicity. Electrons from both indium valence
electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a
pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the
underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long,
suggesting the system might be a suitable model for studying the ground state of two …
We present measurements of the Fermi surface and underlying band structure of a single layer of indium on Si(111) with periodicity. Electrons from both indium valence electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long, suggesting the system might be a suitable model for studying the ground state of two-dimensional metals.
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