Integration of SiCN as a low/spl kappa/etch stop and Cu passivation in a high performance Cu/low/spl kappa/interconnect
J Martin, S Filipiak, T Stephens, F Huang… - Proceedings of the …, 2002 - ieeexplore.ieee.org
Proceedings of the IEEE 2002 International Interconnect Technology …, 2002•ieeexplore.ieee.org
This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation
and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of
SiCN improves interconnect performance by virtue of its lower dielectric constant as
compared to silicon nitride, and through changes to the process integration made possible
by the improved etch selectivity and good copper interface properties.
and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of
SiCN improves interconnect performance by virtue of its lower dielectric constant as
compared to silicon nitride, and through changes to the process integration made possible
by the improved etch selectivity and good copper interface properties.
This paper describes the integration of a silicon carbon nitride (SiCN) copper passivation and etch stop layer into a Cu low k dielectric interconnect technology. The incorporation of SiCN improves interconnect performance by virtue of its lower dielectric constant as compared to silicon nitride, and through changes to the process integration made possible by the improved etch selectivity and good copper interface properties.
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