Integration of edge-emitting quantum dot lasers with different waveguide platforms using micro-transfer printing
IEEE Journal of Selected Topics in Quantum Electronics, 2023•ieeexplore.ieee.org
O-band InAs/GaAs Quantum Dot edge-emitting lasers are integrated onto a number of
waveguiding platforms using micro-transfer printing. These are deep recesses in 220 nm Si,
3 μm Si and 300 nm SiN waveguide circuits. The processing technology to achieve release
and high-yield accurate transfer of laser coupons up to 2.4 mm long and< 5 μm thick onto
the target substrates is described. At 85 mA, waveguide coupled powers of 1.0 mW and 0.95
mW are measured after out-coupling from the 220 nm SOI and 300 nm SiN waveguides …
waveguiding platforms using micro-transfer printing. These are deep recesses in 220 nm Si,
3 μm Si and 300 nm SiN waveguide circuits. The processing technology to achieve release
and high-yield accurate transfer of laser coupons up to 2.4 mm long and< 5 μm thick onto
the target substrates is described. At 85 mA, waveguide coupled powers of 1.0 mW and 0.95
mW are measured after out-coupling from the 220 nm SOI and 300 nm SiN waveguides …
O-band InAs/GaAs Quantum Dot edge-emitting lasers are integrated onto a number of waveguiding platforms using micro-transfer printing. These are deep recesses in 220 nm Si, 3 μm Si and 300 nm SiN waveguide circuits. The processing technology to achieve release and high-yield accurate transfer of laser coupons up to 2.4 mm long and <5 μm thick onto the target substrates is described. At 85 mA, waveguide coupled powers of 1.0 mW and 0.95 mW are measured after out-coupling from the 220 nm SOI and 300 nm SiN waveguides, respectively while 1.7 mW total power was measured from the 3 μm SOI waveguide.
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