Interface-induced two-step RESET for filament-based multi-level resistive memory
F Yuan, S Shen, Z Zhang, L Pan, J Xu - Superlattices and Microstructures, 2016 - Elsevier
In this paper, a two-step RESET switching behavior of Ag/Al 2 O 3/HfO 2/Pt bilayer resistive
random access memory (RRAM) devices is investigated. The interface between the two
oxide layers is responsible for the special two-step RESET switching. When the conducting
filaments have ruptured in the lower layer, the interface can protect the Ag ions of the
filaments from breaking in the upper layer due to the trapped charges or defects at the
interface. Therefore, a stable middle resistance state (MRS) is realized and the device …
random access memory (RRAM) devices is investigated. The interface between the two
oxide layers is responsible for the special two-step RESET switching. When the conducting
filaments have ruptured in the lower layer, the interface can protect the Ag ions of the
filaments from breaking in the upper layer due to the trapped charges or defects at the
interface. Therefore, a stable middle resistance state (MRS) is realized and the device …
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