Interfacial misfit array formation for GaSb growth on GaAs
S Huang, G Balakrishnan, DL Huffaker - Journal of Applied Physics, 2009 - pubs.aip.org
The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers
grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit
(IMF) dislocation array growth mode. Under optimized growth conditions, only pure 90
dislocations are generated along both [110] and [1 1 0] directions that are located at
GaSb/GaAs interface, which leads to very low threading dislocation density propagated
along the growth direction. The long-range uniformity and subsequent strain relaxation of …
grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit
(IMF) dislocation array growth mode. Under optimized growth conditions, only pure 90
dislocations are generated along both [110] and [1 1 0] directions that are located at
GaSb/GaAs interface, which leads to very low threading dislocation density propagated
along the growth direction. The long-range uniformity and subsequent strain relaxation of …
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