Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge

A Ward, DA Broido - Physical Review B—Condensed Matter and Materials …, 2010 - APS
Using a first-principles approach, we present forms for the intrinsic phonon relaxation times
in semiconductors, which properly reflect the physically distinct behaviors of the normal and
umklapp scattering processes. We find that accurate representation of the phonon-phonon
scattering strength and inclusion of scattering of acoustic phonons by optic phonons are
essential ingredients, which are missing from the decades old derivations of commonly used
intrinsic relaxation times. We also assess the validity of the relaxation time approximation …

Erratum: Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge [Phys. Rev. B 81, 085205 (2010)]

A Ward, DA Broido - Physical Review B, 2015 - APS
… Physical Review Research … Physical Review Physics Education Research … Erratum:
Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of
Si and Ge [Phys. Rev. B 81, 085205 (2010)] …
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