Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates
Silver-induced crystallizations of amorphous germanium (α-Ge) thin films were fabricated
through electron beam evaporation on crystalline silicon (c-Si)(100), aluminum-doped zinc
oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization
(SPC) of α-Ge films was investigated for various post-annealing temperatures between 300
and 500° C for 60 min. Two crystallization approaches were compared: SPC and metal-
induced crystallization (MIC). The structural properties of the Ge thin films fabricated by both …
through electron beam evaporation on crystalline silicon (c-Si)(100), aluminum-doped zinc
oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization
(SPC) of α-Ge films was investigated for various post-annealing temperatures between 300
and 500° C for 60 min. Two crystallization approaches were compared: SPC and metal-
induced crystallization (MIC). The structural properties of the Ge thin films fabricated by both …
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