Investigation of temperature dependence, device scalability, and modeling of semifloating-gate transistor memory cell
X Lin, XY Liu, CM Zhang, L Liu, JS Shi… - … on Electron Devices, 2015 - ieeexplore.ieee.org
X Lin, XY Liu, CM Zhang, L Liu, JS Shi, S Zhang, WB Wang, WH Bu, J Wu, Y Gong, PF Wang…
IEEE Transactions on Electron Devices, 2015•ieeexplore.ieee.orgA semifloating-gate transistor had been proposed and its memory function has been
demonstrated recently. In this paper, we further investigate its temperature dependency,
device scalability, and device modeling. The high-temperature behavior is studied by
measuring its endurance, retention, and disturbance immunity at 85° C. The device
scalability down to the 14-nm technology node is investigated by simulation. Its macrodevice
model for circuit design is also developed. Finally, a memory array with the specific …
demonstrated recently. In this paper, we further investigate its temperature dependency,
device scalability, and device modeling. The high-temperature behavior is studied by
measuring its endurance, retention, and disturbance immunity at 85° C. The device
scalability down to the 14-nm technology node is investigated by simulation. Its macrodevice
model for circuit design is also developed. Finally, a memory array with the specific …
A semifloating-gate transistor had been proposed and its memory function has been demonstrated recently. In this paper, we further investigate its temperature dependency, device scalability, and device modeling. The high-temperature behavior is studied by measuring its endurance, retention, and disturbance immunity at 85 °C. The device scalability down to the 14-nm technology node is investigated by simulation. Its macrodevice model for circuit design is also developed. Finally, a memory array with the specific peripheral circuits is designed using the device model developed in this paper.
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