Kinetics of nonisothermal crystallization in Sn10Sb20−x Bi x Se70 glassy semiconductors
Applied Physics A, 2009•Springer
The crystallization kinetics of Sn 10 Sb 20− x Bi x Se 70 (x= 0, 2, 4, 6, 8) chalcogenide
system has been studied. Crystallization studies using differential scanning calorimetry
under nonisothermal conditions with different heating rates are reported. The glass transition
temperature is found to increase with the increase in heating rate as well as with the addition
of bismuth. The apparent activation energy for glass transition and that for crystallization
have been determined using the Kissinger equation. Thermal stability and glass forming …
system has been studied. Crystallization studies using differential scanning calorimetry
under nonisothermal conditions with different heating rates are reported. The glass transition
temperature is found to increase with the increase in heating rate as well as with the addition
of bismuth. The apparent activation energy for glass transition and that for crystallization
have been determined using the Kissinger equation. Thermal stability and glass forming …
Abstract
The crystallization kinetics of Sn10Sb20−x Bi x Se70 (x=0,2,4,6,8) chalcogenide system has been studied. Crystallization studies using differential scanning calorimetry under nonisothermal conditions with different heating rates are reported. The glass transition temperature is found to increase with the increase in heating rate as well as with the addition of bismuth. The apparent activation energy for glass transition and that for crystallization have been determined using the Kissinger equation. Thermal stability and glass forming tendency have also been studied.
Springer
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